At the start of this year, Samsung started mass producing its 14nm LPP chips, popular ones being the Snapdragon 820 and Exynos 8890, and on October 17, the South Korean Conglomerate has announced mass production of its SoCs based on third generation 10nm 10LPE FinFET manufacturing process.
With the early announcement coming from the foundry, we can expect 10nm process based next year top of the line chipsets to be available early next year.
Samsung hasn’t explicitly stated what SoC its producing first but we it is most likely the Successor of Snapdragon 821/820 and Exynos 8890. The new process node is expected to significantly boost chipset performances and thermal efficiency, just as was the case with the switch from 20nm to 14nm/16nm.
This shall also help Android manufacturers close gap on powerful 16nmm based Apple A10 chipset which has recently emerged as the mightiest smartphone chip on the planet. Official announcements from Qualcomm and other players regarding the upcoming chipsets are expected to follow soon.
‘Samsung’s new 10nm FinFET process (10LPE) adopts an advanced 3D transistor structure with additional enhancements in both process technology and design enablement compared to its 14nm predecessor, allowing up to 30-percent increase in area efficiency with 27-percent higher performance or 40-percent lower power consumption. In order to overcome scaling limitations, cutting edge techniques such as triple-patterning to allow bi-directional routing are also used to retain design and routing flexibility from prior nodes.” Explains Samsung in its press announcement.
“The industry’s first mass production of 10nm FinFET technology demonstrates our leadership in advanced process technology,” said Jong Shik Yoon, Executive Vice President, Head of Foundry Business at Samsung Electronics. “We will continue our efforts to innovate scaling technologies and provide differentiated total solutions to our customers.”